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savantic semiconductor product specification silicon npn power transistors 2SC5239 d escription with to-220c package high voltage,high speed switching applications for switching regulator and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 550 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 6 a i b base current 1.5 a p c collector dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC5239 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 550 v v cesat collector-emitter saturation voltage i c =1a ;i b =0.2a 0.5 v v besat base-emitter saturation voltage i c =1a ;i b =0.2a 1.2 v i cbo collector cut-off current v cb =800v ;i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe dc current gain i c =1a ; v ce =4v 10 30 f t transition frequency i e =-0.25a ; v ce =12v 6 mhz c ob collector output capacitance f=1mhz ; v cb =10v 35 pf switching times t on turn-on time 0.7 s t s storage time 4.0 s t f fall time i c =1a; i b1 =0.15a ;i b2 =-0.45a v cc =250v; r l =250 b 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC5239 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC5239

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